Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence
Identifieur interne : 00EA28 ( Main/Repository ); précédent : 00EA27; suivant : 00EA29Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence
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Abstract
Cathodoluminescence (CL) measurements were performed on thick InGaN samples over a wide range of indium concentrations ([In] = 0.03-0.20). The layers were grown on c-plane sapphire using an AlGaN buffer layer, followed by 4 μm GaN, and 100 nm InGaN films. These thick InGaN layers were exceptionally specular, especially at low indium concentrations. Some degree of microscopic roughness was observed for x > 0.15. With the objective of correlating the microstructure to the spatial dependence of the luminescence, average CL spectra over large areas were compared with high-spatial-resolution CL measurements. The variation of the indium-related peaks over large areas was observed under low magnification scanned CL. The full width at half-maximum in the spot mode is typically smaller than wide-area scans by a factor of 2 to 3. The size of the areas with constant emission wavelength changes significantly with indium content. It has also been observed that the distribution of the local CL peak wavelength changes from single-mode Gaussian to a multimodal distribution for x > 0.1. A shoulder of the main peak at the low energy side appears at higher indium content. Spot-mode spectra show that this low energy shoulder consists of single lines at specific wavelengths. In highly resolved monochromatic images we correlate the low energy side shoulder to two structural defects: pinholes and grooves. Particularly, bright luminescence occurs at the center of the grooves.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence</title><author><name sortKey="Bertram, F" uniqKey="Bertram F">F. Bertram</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Arizona State University</s1><s2>Tempe, AZ 85287-1504</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287-1504</wicri:noRegion></affiliation></author><author><name sortKey="Srinivasan, S" uniqKey="Srinivasan S">S. Srinivasan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Arizona State University</s1><s2>Tempe, AZ 85287-1504</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287-1504</wicri:noRegion></affiliation></author><author><name sortKey="Liu, R" uniqKey="Liu R">R. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Arizona State University</s1><s2>Tempe, AZ 85287-1504</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287-1504</wicri:noRegion></affiliation></author><author><name sortKey="Geng, L" uniqKey="Geng L">L. Geng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Arizona State University</s1><s2>Tempe, AZ 85287-1504</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287-1504</wicri:noRegion></affiliation></author><author><name sortKey="Ponce, F A" uniqKey="Ponce F">F. A. Ponce</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Arizona State University</s1><s2>Tempe, AZ 85287-1504</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Tempe, AZ 85287-1504</wicri:noRegion></affiliation></author><author><name sortKey="Riemann, T" uniqKey="Riemann T">T. Riemann</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Experimentelle Physik, University of Magdeburg, Uniplatz 2</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author><author><name sortKey="Christen, J" uniqKey="Christen J">J. Christen</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Experimentelle Physik, University of Magdeburg, Uniplatz 2</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author><author><name sortKey="Tanaka, S" uniqKey="Tanaka S">S. Tanaka</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nichia Corporation</s1><s2>Tokushima-ken 774-8601</s2><s3>JPN</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nichia Corporation</wicri:noRegion></affiliation></author><author><name sortKey="Omiya, H" uniqKey="Omiya H">H. Omiya</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nichia Corporation</s1><s2>Tokushima-ken 774-8601</s2><s3>JPN</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nichia Corporation</wicri:noRegion></affiliation></author><author><name sortKey="Nakagawa, Y" uniqKey="Nakagawa Y">Y. Nakagawa</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nichia Corporation</s1><s2>Tokushima-ken 774-8601</s2><s3>JPN</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nichia Corporation</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0410957</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0410957 INIST</idno><idno type="RBID">Pascal:02-0410957</idno><idno type="wicri:Area/Main/Corpus">00EC36</idno><idno type="wicri:Area/Main/Repository">00EA28</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-5107</idno><title level="j" type="abbreviated">Mater. sci. eng., B, Solid-state mater. adv. technol.</title><title level="j" type="main">Materials science & engineering. B, Solid-state materials for advanced technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term><term>Cathodoluminescence</term><term>Gallium nitrides</term><term>Gaussian distribution</term><term>Indium nitrides</term><term>Luminescence</term><term>Microstructure</term><term>Phase separation</term><term>Pinholes</term><term>Semiconductor materials</term><term>Spatial resolution</term><term>Spatial variation</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cathodoluminescence</term><term>Variation spatiale</term><term>Luminescence</term><term>Piqûre corrosion</term><term>Séparation phase</term><term>Microstructure</term><term>Résolution spatiale</term><term>Loi Gauss</term><term>Indium nitrure</term><term>Gallium nitrure</term><term>Composé ternaire</term><term>Semiconducteur</term><term>Couche tampon</term><term>InGaN</term><term>Ga In N</term><term>7860H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Cathodoluminescence (CL) measurements were performed on thick InGaN samples over a wide range of indium concentrations ([In] = 0.03-0.20). The layers were grown on c-plane sapphire using an AlGaN buffer layer, followed by 4 μm GaN, and 100 nm InGaN films. These thick InGaN layers were exceptionally specular, especially at low indium concentrations. Some degree of microscopic roughness was observed for x > 0.15. With the objective of correlating the microstructure to the spatial dependence of the luminescence, average CL spectra over large areas were compared with high-spatial-resolution CL measurements. The variation of the indium-related peaks over large areas was observed under low magnification scanned CL. The full width at half-maximum in the spot mode is typically smaller than wide-area scans by a factor of 2 to 3. The size of the areas with constant emission wavelength changes significantly with indium content. It has also been observed that the distribution of the local CL peak wavelength changes from single-mode Gaussian to a multimodal distribution for x > 0.1. A shoulder of the main peak at the low energy side appears at higher indium content. Spot-mode spectra show that this low energy shoulder consists of single lines at specific wavelengths. In highly resolved monochromatic images we correlate the low energy side shoulder to two structural defects: pinholes and grooves. Particularly, bright luminescence occurs at the center of the grooves.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-5107</s0></fA01><fA03 i2="1"><s0>Mater. sci. eng., B, Solid-state mater. adv. technol.</s0></fA03><fA05><s2>93</s2></fA05><fA06><s2>1-3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence</s1></fA08><fA11 i1="01" i2="1"><s1>BERTRAM (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>SRINIVASAN (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIU (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>GENG (L.)</s1></fA11><fA11 i1="05" i2="1"><s1>PONCE (F. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>RIEMANN (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHRISTEN (J.)</s1></fA11><fA11 i1="08" i2="1"><s1>TANAKA (S.)</s1></fA11><fA11 i1="09" i2="1"><s1>OMIYA (H.)</s1></fA11><fA11 i1="10" i2="1"><s1>NAKAGAWA (Y.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Arizona State University</s1><s2>Tempe, AZ 85287-1504</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Experimentelle Physik, University of Magdeburg, Uniplatz 2</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Nichia Corporation</s1><s2>Tokushima-ken 774-8601</s2><s3>JPN</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s1>19-23</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12899B</s2><s5>354000108222870050</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0410957</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science & engineering. B, Solid-state materials for advanced technology</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Cathodoluminescence (CL) measurements were performed on thick InGaN samples over a wide range of indium concentrations ([In] = 0.03-0.20). The layers were grown on c-plane sapphire using an AlGaN buffer layer, followed by 4 μm GaN, and 100 nm InGaN films. These thick InGaN layers were exceptionally specular, especially at low indium concentrations. Some degree of microscopic roughness was observed for x > 0.15. With the objective of correlating the microstructure to the spatial dependence of the luminescence, average CL spectra over large areas were compared with high-spatial-resolution CL measurements. The variation of the indium-related peaks over large areas was observed under low magnification scanned CL. The full width at half-maximum in the spot mode is typically smaller than wide-area scans by a factor of 2 to 3. The size of the areas with constant emission wavelength changes significantly with indium content. It has also been observed that the distribution of the local CL peak wavelength changes from single-mode Gaussian to a multimodal distribution for x > 0.1. A shoulder of the main peak at the low energy side appears at higher indium content. Spot-mode spectra show that this low energy shoulder consists of single lines at specific wavelengths. In highly resolved monochromatic images we correlate the low energy side shoulder to two structural defects: pinholes and grooves. Particularly, bright luminescence occurs at the center of the grooves.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H60H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Cathodoluminescence</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Cathodoluminescence</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Variation spatiale</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Spatial variation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Variación espacial</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Luminescence</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Luminescence</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Piqûre corrosion</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Pinholes</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Séparation phase</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Phase separation</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Microstructure</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Microstructure</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Résolution spatiale</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Spatial resolution</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Loi Gauss</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gaussian distribution</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium nitrure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium nitrides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium nitrure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium nitrides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>18</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Couche tampon</s0><s5>19</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Buffer layer</s0><s5>19</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Capa tampón</s0><s5>19</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Ga In N</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7860H</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fN21><s1>238</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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